machine/esp32c3: implement BlockDevice for esp32c3 flash

- Add `machine_esp32c3_flash.go` to implement the `BlockDevice` interface for ESP32-C3.
- Map internal ESP ROM SPI flash and cache invalidation functions via CGo.
- Update `targets/esp32c3.ld` to expose `__flash_data_start` and `__flash_data_end` linker variables.
- Add `esp32c3` to build tags in `src/machine/flash.go`.
- Ensure atomic flash operations by disabling interrupts and invalidating cache to prevent stale reads.

Signed-off-by: deadprogram <ron@hybridgroup.com>
This commit is contained in:
deadprogram
2026-03-29 10:47:33 +02:00
parent f748dc6fd8
commit c2a04e1a45
3 changed files with 142 additions and 1 deletions
+1 -1
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@@ -1,4 +1,4 @@
//go:build nrf || nrf51 || nrf52 || nrf528xx || stm32f4 || stm32l0 || stm32l4 || stm32wlx || atsamd21 || atsamd51 || atsame5x || rp2040 || rp2350
//go:build esp32c3 || nrf || nrf51 || nrf52 || nrf528xx || stm32f4 || stm32l0 || stm32l4 || stm32wlx || atsamd21 || atsamd51 || atsame5x || rp2040 || rp2350
package machine
+137
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@@ -0,0 +1,137 @@
//go:build esp32c3
package machine
import (
"runtime/interrupt"
"unsafe"
)
/*
#include <stdint.h>
extern int esp_rom_spiflash_read(uint32_t src_addr, uint32_t *data, uint32_t len);
extern int esp_rom_spiflash_write(uint32_t dest_addr, const uint32_t *data, uint32_t len);
extern int esp_rom_spiflash_erase_sector(uint32_t sector_num);
extern int esp_rom_spiflash_unlock(void);
extern void Cache_Invalidate_Addr(uint32_t addr, uint32_t size);
*/
import "C"
// compile-time check for ensuring we fulfill BlockDevice interface
var _ BlockDevice = flashBlockDevice{}
var Flash flashBlockDevice
type flashBlockDevice struct {
}
// ReadAt reads the given number of bytes from the block device.
func (f flashBlockDevice) ReadAt(p []byte, off int64) (n int, err error) {
if readAddress(off)+uintptr(len(p)) > FlashDataEnd() {
return 0, errFlashCannotReadPastEOF
}
data := unsafe.Slice((*byte)(unsafe.Add(unsafe.Pointer(FlashDataStart()), off)), len(p))
copy(p, data)
return len(p), nil
}
// WriteAt writes the given number of bytes to the block device.
// Only word (32 bits) length data can be programmed.
// If the length of p is not long enough it will be padded with 0xFF bytes.
// This method assumes that the destination is already erased.
func (f flashBlockDevice) WriteAt(p []byte, off int64) (n int, err error) {
return f.writeAt(p, off)
}
// Size returns the number of bytes in this block device.
func (f flashBlockDevice) Size() int64 {
return int64(FlashDataEnd() - FlashDataStart())
}
const writeBlockSize = 4
// WriteBlockSize returns the block size in which data can be written to
// memory. It can be used by a client to optimize writes, non-aligned writes
// should always work correctly.
func (f flashBlockDevice) WriteBlockSize() int64 {
return writeBlockSize
}
const eraseBlockSizeValue = 1 << 12
func eraseBlockSize() int64 {
return eraseBlockSizeValue
}
// EraseBlockSize returns the smallest erasable area on this particular chip
// in bytes. This is used for the block size in EraseBlocks.
func (f flashBlockDevice) EraseBlockSize() int64 {
return eraseBlockSize()
}
// EraseBlocks erases the given number of blocks. An implementation may
// transparently coalesce ranges of blocks into larger bundles if the chip
// supports this. The start and len parameters are in block numbers, use
// EraseBlockSize to map addresses to blocks.
func (f flashBlockDevice) EraseBlocks(start, length int64) error {
return f.eraseBlocks(start, length)
}
// return the correct address to be used for reads
func readAddress(off int64) uintptr {
return FlashDataStart() + uintptr(off)
}
const flashDROMStart = 0x3C000000
// return the correct physical address to be used for write/erase
func writeAddress(off int64) uint32 {
// DROM maps 1:1 with flash physical offset, starting at 0x3C000000.
return uint32(readAddress(off) - flashDROMStart)
}
func (f flashBlockDevice) writeAt(p []byte, off int64) (n int, err error) {
if readAddress(off)+uintptr(len(p)) > FlashDataEnd() {
return 0, errFlashCannotWritePastEOF
}
address := writeAddress(off)
padded := flashPad(p, int(f.WriteBlockSize()))
state := interrupt.Disable()
defer interrupt.Restore(state)
C.esp_rom_spiflash_unlock()
res := C.esp_rom_spiflash_write(C.uint32_t(address), (*C.uint32_t)(unsafe.Pointer(&padded[0])), C.uint32_t(len(padded)))
C.Cache_Invalidate_Addr(C.uint32_t(readAddress(off)), C.uint32_t(len(padded)))
if res != 0 {
return 0, errFlashCannotWriteData
}
return len(padded), nil
}
func (f flashBlockDevice) eraseBlocks(start, length int64) error {
address := writeAddress(start * f.EraseBlockSize())
if uintptr(unsafe.Add(unsafe.Pointer(uintptr(address)+flashDROMStart), length*f.EraseBlockSize())) > FlashDataEnd() {
return errFlashCannotErasePastEOF
}
state := interrupt.Disable()
defer interrupt.Restore(state)
C.esp_rom_spiflash_unlock()
sector := address / uint32(f.EraseBlockSize())
for i := int64(0); i < length; i++ {
res := C.esp_rom_spiflash_erase_sector(C.uint32_t(sector + uint32(i)))
C.Cache_Invalidate_Addr(C.uint32_t(readAddress((start+i)*f.EraseBlockSize())), C.uint32_t(f.EraseBlockSize()))
if res != 0 {
return errFlashCannotErasePage
}
}
return nil
}
+4
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@@ -161,8 +161,12 @@ SECTIONS
*(.text.exception_vectors)
. = ALIGN (4);
*(.text .text.*)
_irom_end = .;
} >IROM
PROVIDE(__flash_data_start = ALIGN(_irom_end - 0x42000000 + 0x3C000000, 4096));
PROVIDE(__flash_data_end = 0x3C000000 + 4M);
/DISCARD/ :
{
*(.eh_frame) /* causes 'no memory region specified' error in lld */