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machine/samd51: write to flash memory in 512 byte long chunks
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@@ -2163,7 +2163,7 @@ func (f flashBlockDevice) ReadAt(p []byte, off int64) (n int, err error) {
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}
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// WriteAt writes the given number of bytes to the block device.
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// Only word (32 bits) length data can be programmed.
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// Data is written to the page buffer in 4-byte chunks, then saved to flash memory.
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// See SAM-D5x-E5x-Family-Data-Sheet-DS60001507.pdf page 591-592.
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// If the length of p is not long enough it will be padded with 0xFF bytes.
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// This method assumes that the destination is already erased.
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@@ -2185,16 +2185,13 @@ func (f flashBlockDevice) WriteAt(p []byte, off int64) (n int, err error) {
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waitWhileFlashBusy()
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for j := 0; j < len(padded); j += int(f.WriteBlockSize()) {
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// write first word using double-word low order word
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*(*uint32)(unsafe.Pointer(address)) = binary.LittleEndian.Uint32(padded[j : j+int(f.WriteBlockSize()/2)])
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// write second word using double-word high order word
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*(*uint32)(unsafe.Add(unsafe.Pointer(address), uintptr(f.WriteBlockSize())/2)) = binary.LittleEndian.Uint32(padded[j+int(f.WriteBlockSize()/2) : j+int(f.WriteBlockSize())])
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waitWhileFlashBusy()
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// page buffer is 512 bytes long, but only 4 bytes can be written at once
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for k := 0; k < int(f.WriteBlockSize()); k += 4 {
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*(*uint32)(unsafe.Pointer(address + uintptr(k))) = binary.LittleEndian.Uint32(padded[j+k : j+k+4])
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}
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sam.NVMCTRL.SetADDR(uint32(address))
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sam.NVMCTRL.CTRLB.Set(sam.NVMCTRL_CTRLB_CMD_WQW | (sam.NVMCTRL_CTRLB_CMDEX_KEY << sam.NVMCTRL_CTRLB_CMDEX_Pos))
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sam.NVMCTRL.CTRLB.Set(sam.NVMCTRL_CTRLB_CMD_WP | (sam.NVMCTRL_CTRLB_CMDEX_KEY << sam.NVMCTRL_CTRLB_CMDEX_Pos))
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waitWhileFlashBusy()
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@@ -2213,7 +2210,7 @@ func (f flashBlockDevice) Size() int64 {
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return int64(FlashDataEnd() - FlashDataStart())
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}
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const writeBlockSize = 8
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const writeBlockSize = 512
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// WriteBlockSize returns the block size in which data can be written to
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// memory. It can be used by a client to optimize writes, non-aligned writes
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